Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

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Abstract Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C.After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication procedures, we applied voltage at particular sites on the rogue st pro 3 iron InAs WL, creating the site where In atoms, which were migrating on the WL, favored to congregate.At 240°C, InAs nano dots (width: 20–40 nm, height: 1.

5–2.0 obermeyer perseus bib pants nm) were fabricated.At 430°C, InAs nano dots (width: 16–20 nm, height: 0.75–1.

5 nm) were also fabricated.However, these dots were remained at least 40 s and collapsed less than 1000 s.Then, we fabricated InAs nano dots (width: 24–150 nm, height: 2.8–28 nm) at 300°C under In and As4 irradiations.

These were not collapsed and considered to high crystalline dots.